As majority carriers are electrons, current in n-type is the electron current. This current is termed as “Drift current”. So, under the influence of applied voltage, this electron drift causes current to flow in a semiconductor.The electrons get repelled by the negative terminal of the DC voltage supply and drift towards the positive terminal.Forward Biasing: In a PN junction diode, the positive terminal of a voltage source is connected to the p-type side, and the negative terminal is connected to the n-type side, the diode is said to be in forwarding bias condition.Unbiased – No Voltage Applied) Forward Biased Diode It opposes the further migration of holes and electrons across the junction.At this region, a static electric field called Barrier Potential is created across the PN junction of the diode.This region so formed is called as depletion region. Due to this, numbers of positive ions and negative ions will accumulate at the junction. Similarly, the immobile ions in the p-type side near the junction edge. The immobile in the n-type side near the junction edge.
In this process, free electrons from N-side will diffuse (spread) into the P side and recombine takes place in holes present there, leaving +ve immobile (not moveable) ions in the N- side and creating -ve immobile ions in the P side of the diode.When no voltage supplied to a rectifier diode then it is called an Unbiased Diode, N-side will have a majority number of electrons, and very few numbers holes (due to thermal excitation) whereas the P- side will have a majority of charge carriers holes and very few numbers of electrons.
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